Studies of Transport Properties in Topological Insulators
نویسندگان
چکیده
منابع مشابه
Scanning tunneling microscopy studies of topological insulators.
Scanning tunneling microscopy (STM), with surface sensitivity, is an ideal tool to probe the intriguing properties of the surface state of topological insulators (TIs) and topological crystalline insulators (TCIs). We summarize the recent progress on those topological phases revealed by STM studies. STM observations have directly confirmed the existence of the topological surface states and cle...
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We present one-shot GW calculations of the bulk electronic structure of the topological insulators Bi2Se3 and Bi2Te3 within the all-electron full-potential linearized augmented-plane-wave formalism. We compare three different ways of treating the spin-orbit interaction in calculating the quasiparticle energies: (i) The spin-orbit coupling (SOC) is already incorporated in the noninteracting syst...
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With strong spin-orbit coupling, topological insulators have an insulating bulk state, characterized by a band gap, and a conducting surface state, characterized by a Dirac cone. Plasmons in topological insulators show high frequency-tunability in the mid-infrared and terahertz spectral regions with transverse spin oscillations, also called “spin-plasmons”. This paper presents a discussion and ...
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ژورنال
عنوان ژورنال: Physics and High Technology
سال: 2012
ISSN: 1225-2336
DOI: 10.3938/phit.21.011